MMBT6427
Samsung
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Npn transistor.
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MMBT6427 - NPN Transistor
(National Semiconductor)
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MMBT6427 - NPN Transistor
(Diodes Incorporated)
MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Hi.
MMBT6427 - NPN Transistor
(Fairchild)
2N6427 / MMBT6427
Discrete POWER & Signal Technologies
2N6427
MMBT6427
C
E C B
TO-92
E
SOT-23
Mark: 1V
B
NPN Darlington Transistor
This device.
MMBT6427 - NPN Transistors Darlington Amplifier
(WEITRON)
NPN Transistors Darlington Amplifier
* We declare that the material of product pliance with RoHS requirements.
P b Lead(Pb)-Free
MAXIMUM RATINGS
.
MMBT6427 - DARLINGTON TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO vCBO VEBO
'C
.
MMBT6427LT1 - Darlington Transistor
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT6427LT1/D
Darlington Transistor
NPN Silicon
COLLECTOR 3 BASE 1
MMBT6427LT1
Motoro.
MMBT6427LT1 - NPN Transistor
(ON)
..
MMBT6427LT1
Preferred Device
Darlington Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating C.
MMBT6428 - NPN Transistor
(Samsung)
.
MMBT6428 - AMPLIFIER TRANSISTOR
(Motorola)
MMBT6428,29
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB) AMPLIFIER TRANSISTOR
NPN SILICON
Refer to MPSA18 for graphs.
MAXIMUM RATINGS
Rating Collecto.
MMBT6428 - NPN Transistor
(Fairchild Semiconductor)
MMBT6428
MMBT6428
NPN General Purpose Amplifier
• This device designed for general pupose amplifier applications at collector currents to 300mA • Sou.