K4S281632M-TL1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

K4S281632M-TL1L Datasheet Preview — Preview of K4S281632M-TL1L PDF

Datasheet Details

Part number	K4S281632M-TL1L
Manufacturer	Samsung semiconductor
File Size	87.41 KB
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S281632M-TL1L_Samsungsemiconductor.pdf

K4S281632M-TL1L Product details

Description

The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle.

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Published: Apr 7, 2005 |