K4S281632M-TL10 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Description

K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug.1999 Samsung Electronics reserves the right to c.
The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high.

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Datasheet Specifications

Part number: K4S281632M-TL10
Manufacturer: Samsung semiconductor
File Size: 87.41 KB
Datasheet: K4S281632M-TL10_Samsungsemiconductor.pdf
Description: 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Part No. K4S281632M-TC/L80 K4S281632M-TC/L1H K4S281632M-TC/L1L Max Freq. 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54pin TSOP(II) InterPackage K4S281632M-TC/L10 66MHz(CL=2 &3) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 2M x 16 Sense

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K4S281632M-TL10 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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