K4S281632M-TL10

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

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K4S281632M-TL10

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Samsung semiconductor

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Description:

128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.
K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug..
The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152.

✔ K4S281632M-TL10 Features

JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burs

✔ K4S281632M-TL10 Application

ORDERING INFORMATION Part No. K4S281632M-TC/L80 K4S281632M-TC/L1H K4S281632M-TC/L1L Max Freq. 125MHz(CL=3)

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K4S281632M-TL10 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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