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K7I641882M (K7I643682M / K7I641882M) 72Mb M-die DDRII SRAM Specification 165 FBGA

K7I641882M Description

K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) www.DataSheet.
Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Burst Count Address Inputs Address Inputs Data Inputs Outputs Read, Wri.

K7I641882M Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
* Pipelined, double-data rate operation.
* Common data input/output

K7I641882M Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. -

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Datasheet Details

Part number
K7I641882M
Manufacturer
Samsung semiconductor
File Size
332.41 KB
Datasheet
K7I641882M_Samsungsemiconductor.pdf
Description
(K7I643682M / K7I641882M) 72Mb M-die DDRII SRAM Specification 165 FBGA

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K7I643682M K7I641882M 72Mb M-die DDRII SRAM Specification 165 FBGA Samsung semiconductor
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