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K7I161882B, K7I163682B (K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM

K7I161882B Description

K7I163682B K7I161882B Document Title 512Kx36 & 1Mx18 DDRII CIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM Revision History Rev.No.0.0 0.1 H.
Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Burst Count Address Inputs Address Inputs Data Inputs Outputs Read, Wri.

K7I161882B Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
* Pipelined, double-data rate operation.
* Common data input/output

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K7I161882B, K7I163682B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K7I161882B, K7I163682B
Manufacturer
Samsung semiconductor
File Size
404.76 KB
Datasheet
K7I163682B_Samsungsemiconductor.pdf
Description
(K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
Note
This datasheet PDF includes multiple part numbers: K7I161882B, K7I163682B.
Please refer to the document for exact specifications by model.

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K7I163682B K7I161882B 1Mx18-bit DDRII CIO SRAM Samsung semiconductor
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