K7I163684B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM

Samsung semiconductor

Description

K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM 18Mb DDRII SRAM Specification 165FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THI.
Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Burst Count Address Inputs Address Inputs Data Inputs Outputs Read, Wri.

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Datasheet Specifications

Part number: K7I163684B
Manufacturer: Samsung semiconductor
File Size: 454.90 KB
Datasheet: K7I163684B_Samsungsemiconductor.pdf
Description: 512Kx36 & 1Mx18 DDRII CIO b4 SRAM

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future frequency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
* Pipelined, double-data rate operation.
* Common data input/output

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. w

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K7I163684B 512Kx36 1Mx18 DDRII CIO SRAM Samsung semiconductor

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