K7I321882M 1Mx36 & 2Mx18 DDRII CIO b2 SRAM

Samsung semiconductor

Description

K7D803671B K7D801871B Document Title 8M DDR SYNCHRONOUS SRAM 256Kx36 & 512Kx18 SRAM Revision History Rev No.Rev.0.0 Rev.0.1 Rev.0.2 History -Ini.
Pin Name K, K SA SA0, SA1 DQ CQ, CQ B1 B2 B3 G LBO Pin Description Differential Clocks Synchronous Address Input Synchronous Burst Address Input (SA 0.

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Datasheet Specifications

Part number: K7I321882M
Manufacturer: Samsung semiconductor
File Size: 270.13 KB
Datasheet: K7I321882M_Samsungsemiconductor.pdf
Description: 1Mx36 & 2Mx18 DDRII CIO b2 SRAM

Features

* and the timing waveforms regarding the burst controllability. - Recommended DC operating conditions for Clock added. - AC test conditions for V DDQ=1.8V and Single ended clock added. (AC Test Conditions 2) - Package thermal characteristics added. - Add-HC35 part(Part Number, Idd, AC Characteristics)

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K7I321882M 1Mx36 2Mx18 DDRII CIO SRAM Samsung semiconductor

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