SW30N06

N-channel MOSFET

Samwin

SW30N06 Features

* High ruggedness

* RDS(ON) (Max 0.036 Ω)@VGS=10V

* Gate Charge (Typ 20nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.036 ohm 2 1 1 2 3 1 2 3 2 3 1. Gate 2. Drain 3. Source 1 General Description These N-chan

SW30N06 General Description

These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excelle.

SW30N06 Datasheet (551.06 KB)

SW30N06 Datasheet Preview — Preview of SW30N06 PDF

Datasheet Details

Part number:

SW30N06

Manufacturer:

Samwin

File Size:

551.06 KB

Description:

N-channel mosfet.

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SW30N06 N-channel MOSFET Samwin

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SW30N06 Features

SW30N06 General Description

Datasheet Details

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