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SW30N06 - N-channel MOSFET

Samwin

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Datasheet Details

Part number	SW30N06
Manufacturer	Samwin
File Size	551.06 KB
Description	N-channel MOSFET
Datasheet	SW30N06_Samwin.pdf

SW30N06 Product details

Description

These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology.

Features

High ruggedness.
RDS(ON) (Max 0.036 Ω)@VGS=10V.
Gate Charge (Typ 20nC).
Improved dv/dt Capability.
100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.036 ohm 2 1 1 2 3 1 2 3 2 3 1. Gate 2. Drain 3. Source 1 General.

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Published: Mar 5, 2012 |