SW630 Datasheet - Samwin

SW630, N-Channel MOSFET

SAMWIN General .
Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.

Features

* N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W SW630 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching t

SW630_Samwin.pdf