SW640 - N-Channel MOSFET

Product Overview

Samwin

Part number	SW640
Manufacturer	Samwin
File Size	603.21 KB
Description	N-Channel MOSFET
Datasheet	SW640 Datasheet
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N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and als.

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Published: Apr 17, 2008 |