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60V N -ch MOSFET
2SK3711
www.DataSheet4U.com
December 2005
■Features
• Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed
■Package—TO3P
■Applications
• Electric power steering • High current switching
■Equivalent circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
(Ta=25°C)
Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Channel Temperature Storage Temperature
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 Tch Tstg
Rating 60 ±20 ±70A ±140A 130 (Tc=25°C) 468 150 -55 to 150
Unit V V A A W mJ °C °C
*1 PW≤100μs, duty cycle≤1% *2 VDD=20V, L=1mH, ILp=25A, unclamped, RG=50Ω. See Fig.1
.
Sanken Electric Co.,Ltd.
http://www.
K3711 Datasheet
