Datasheet4U Logo Datasheet4U.com

K3715 - 2SK3715

Datasheet Summary

Description

The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A).
  • Low C iss: C iss = 8400 pF TYP.
  • Built-in gate protection diode (Isolated TO-220).

📥 Download Datasheet

Datasheet preview – K3715

Datasheet Details

Part number K3715
Manufacturer NEC
File Size 133.41 KB
Description 2SK3715
Datasheet download datasheet K3715 Datasheet
Additional preview pages of the K3715 datasheet.

📁 Similar Datasheet

  • K3711 - 2SK3711 (Sanken electric)
  • K3700 - 2SK3700 (Toshiba Semiconductor)
  • K3702 - 2SK3702 (Sanyo Semicon Device)
  • K3703 - 2SK3703 (Sanyo Semicon Device)
  • K3704 - 2SK3704 (Sanyo)
  • K3706 - 2SK3706 (Sanyo Semicon Device)
  • K3706 - N-Channel MOSFET (VBsemi)
  • K3709 - 2SK3709 (Sanyo Semicon Device)
  • K372 - 2SK372 (Toshiba)
  • K3728-01MR - 2SK3728-01MR (Fuji Semiconductors)
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3715 PACKAGE Isolated TO-220 FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A) • Low C iss: C iss = 8400 pF TYP. • Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±75 ±300 40 2.
Published: |