K3700 Datasheet - Toshiba Semiconductor

K3700 2SK3700

2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Dra.

K3700 Datasheet (222.54 KB)