K3758 Datasheet - Toshiba Semiconductor

K3758 Silicon N Channel MOS Type Field Effect Transistor

2SK3758 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3758 Switching Regulator Applications unit Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) /Circuit Maximum Ratings (Ta = 25°C) 1155..66mamx.ax 2.7 3.84 0.2 3.84 0.2 101.05.5mmaax x 44..77mmaxax 1.3 1.3 6.

K3758-ToshibaSemiconductor.pdf