K3758 Silicon N Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

2SK3758 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3758 Switching Regulator Applications unit * Low drain-sourc.

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Datasheet Specifications

Part number: K3758
Manufacturer: Toshiba ↗ Semiconductor
File Size: 87.67 KB
Datasheet: K3758-ToshibaSemiconductor.pdf
Description: Silicon N Channel MOS Type Field Effect Transistor

Applications

* unit
* Low drain-source ON resistance: RDS (ON) = 1.35 (typ. )
* High forward transfer admittance: |Yfs| = 3.5S (typ. )
* Low leakage current: IDSS = 100 A (VDS = 500 V)
* Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) /Circuit Maximum Ratings (Ta = 25°C)

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K3758 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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