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K3767 2SK3767

K3767 Description

www.DataSheet4U.com 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications * .

K3767 Applications

* Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ. ) High forward transfer admittance: |Yfs| = 1.6S (typ. ) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum www. DataSheet4U. com Rat

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2SK3767 Toshiba Semiconductor
Toshiba Semiconductor K3767-like datasheet