K3767 Datasheet - Toshiba Semiconductor

K3767 2SK3767

www.DataSheet4U.com 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum www.DataSheet4U.com Ratings (Ta = 25°C) Characteristics Symbol VDSS VDGR VGSS DC Pu.

K3767 Datasheet (416.47 KB)