Datasheet Specifications
- Part number
- K3757
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 284.11 KB
- Datasheet
- K3757_ToshibaSemiconductor.pdf
- Description
- 2SK3757
Description
www.DataSheet4U.com 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3757 Switching Regulator Applications * .
Applications
* Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ. ) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum RatingsK3757 Distributors
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