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K372 Datasheet - Toshiba

Datasheet Details

Part number:

K372

Manufacturer:

Toshiba ↗

File Size:

182.13 KB

Description:

2SK372

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK372 Unit: mm * High breakdown voltage: VGDS = *40 V * High input impedance: IGSS = *1.0 nA (max) (VGS =

K372-Toshiba.pdf

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K372, 2SK372

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK372 Unit: mm High breakdown voltage: VGDS = 40 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA) Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction te

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