RU3B
Sanken ↗ electric
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Fast-recovery rectifier diodes.
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RU3 - Fast-Recovery Rectifier Diodes
(Sanken electric)
RU3 - RU3C
PRV : 400 - 1000 Volts Io : 1.5 Amperes
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low r.
RU3 - FAST RECOVERY RECTIFIER DIODES
(EIC)
.eicsemi.
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RU3 - RU3A
PRV : 400 - 600 Volts Io : 1.5 Amperes
FAST RECOVERY RECTIFIER DIODES
D.
RU3 - Silicon And Fast Recovery Rectifiers
(WEJ)
RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified .
RU30 - Fast-Recovery Rectifier Diodes
(Sanken electric)
.
RU30100L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30100L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V
• Super High Dense .
RU30100R - N-Channel Advanced Power MOSFET
(Ruichips)
RU30100R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Super High Dense Ce.
RU30105L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30105L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.
RU30105R - N-Channel Advanced Power MOSFET
(Ruichips)
RU30105R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/125A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.
RU30106L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30106L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/130A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V
• Super High Dense Ce.
RU3010H - N-Channel Advanced Power MOSFET
(Ruichips)
RU3010H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/8A, RDS (ON) =18mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V
• Super High Dense.
