Datasheet4U Logo Datasheet4U.com

RU30120M - N-Channel Advanced Power MOSFET

General Description

PDFN5060 Applications DC/DC Conversion Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS

Key Features

  • 30V/120A, RDS (ON) =2mΩ(Typ. )@VGS=10V RDS (ON) =2.9mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Datasheet Details

Part number RU30120M
Manufacturer Ruichips
File Size 302.05 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30120M Datasheet

Other Datasheets by Ruichips

Part Number Description
RU30120L N-Channel Advanced Power MOSFET
RU30120R N-Channel Advanced Power MOSFET
RU30120S N-Channel Advanced Power MOSFET
RU30100L N-Channel Advanced Power MOSFET
RU30100R N-Channel Advanced Power MOSFET
RU30105L N-Channel Advanced Power MOSFET
RU30105R N-Channel Advanced Power MOSFET
RU30106L N-Channel Advanced Power MOSFET
RU3010H N-Channel Advanced Power MOSFET
RU3013H N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RU30120M N-Channel Advanced Power MOSFET Features • 30V/120A, RDS (ON) =2mΩ(Typ.)@VGS=10V RDS (ON) =2.9mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN5060 Applications • DC/DC Conversion • Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB.