RU30120L - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Lar

Features

30V/120A, RDS (ON) =2.5mΩ (Typ. ) @ VGS=10V RDS (ON) =3.3mΩ (Typ. ) @ VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU30120L
Manufacturer	Ruichips
File Size	273.90 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30120L Datasheet
Additional preview pages of the RU30120L datasheet.

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RU30120L N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.

Published: Apr 10, 2017 |