RU30120R - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La

Features

30V/120A, RDS (ON) =2.5mΩ (Typ. ) @ VGS=10V RDS (ON) =3.3mΩ (Typ. ) @ VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

📥 Download Datasheet

Datasheet Details

Part number	RU30120R
Manufacturer	Ruichips
File Size	298.41 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30120R Datasheet
Additional preview pages of the RU30120R datasheet.

📁 Similar Datasheet

RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3060L - N-Channel MOSFET (VBsemi)
RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
RU30E4B - N-Channel MOSFET (VBsemi)
RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3 - FAST RECOVERY RECTIFIER DIODES (EIC)
RU3 - Silicon And Fast Recovery Rectifiers (WEJ)
RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU31 - Fast-Recovery Rectifier Diodes (Sanken electric)

Other Datasheets by Ruichips

RU30120L - N-Channel Advanced Power MOSFET
RU30120M - N-Channel Advanced Power MOSFET
RU30120S - N-Channel Advanced Power MOSFET
RU30100L - N-Channel Advanced Power MOSFET
RU30100R - N-Channel Advanced Power MOSFET
RU30105L - N-Channel Advanced Power MOSFET
RU30105R - N-Channel Advanced Power MOSFET
RU30106L - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

RU30120R N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.

Published: Apr 10, 2017 |