RU30120S - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

30V/120A, RDS (ON) =2.5mΩ(Typ. )@VGS=10V RDS (ON) =3.3mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% Avalanche Tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU30120S
Manufacturer	Ruichips
File Size	302.41 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30120S Datasheet
Additional preview pages of the RU30120S datasheet.

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Full PDF Text Transcription

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RU30120S N-Channel Advanced Power MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =3.3mΩ(Typ.)@VGS=4.

Published: Apr 4, 2016 |