2SA1370 Datasheet - Sanyo Semicon Device

2SA1370 PNP/NPN Epitaxial Planar Silicon Transistors

2SA1370 Features

* High breakdown voltage : VCEO≥200V.

* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP).

* Adoption of FBET process. ( ) : 2SA1370 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle

Datasheet Details

2SA1370

Sanyo Semicon Device

155.37 KB

Pnp/npn epitaxial planar silicon transistors.

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