Part number:
2SA1654
Manufacturer:
Sanyo Semicon Device
File Size:
137.67 KB
Description:
Pnp/npn epitaxial planar silicon transistors.
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2SA1654
Sanyo Semicon Device
137.67 KB
Pnp/npn epitaxial planar silicon transistors.
.
📁 Related Datasheet
2SA1650 - PNP SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
2SA1650
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1650 is a mold power transistor develope.
2SA1651 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1651
DESCRIPTION ·With TO-220Fa package ·Fast sw.
2SA1651 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
VCEO= -100V(Min) ·Fast switching speed ·Low collector saturation vo.
2SA1656 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo)
.
2SA1657 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
VCEO= -150V(Min) ·Complement to Type 2SC4368 ·Full-mold package tha.
2SA1658 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SA1658
DESCRIPTION ·With TO-220F package ·Compleme.
2SA1658 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SA1658
DESCRIPTION ·Collector-Emitter Breakdown Voltage
VCEO= -30V(Min) ·Complement to Type 2SC4369 ·Full-mold pac.
2SA1659 - POWER TRANSISTOR
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1659
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= -160V(Min) ·Complement .
