2SA1659 POWER TRANSISTOR

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 .
High Collector-Emitter Breakdown Voltage VCEO= -160V(Min). Complement to Type 2SC4370. Full-mold package that does not require an insulat.

📥 Download Datasheet

2SA1659 Datasheet Preview — Preview of 2SA1659 PDF

Datasheet Specifications

Part number: 2SA1659
Manufacturer: Inchange Semiconductor
File Size: 196.49 KB
Datasheet: 2SA1659_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Coll

2SA1659 Distributors

📁 Related Datasheet

2SA1650 2SA1651 2SA1654 2SA1656 2SA1658 2SA1600

📌 All Tags

2SA1659 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1659-like datasheet