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2SA1659 - POWER TRANSISTOR

2SA1659 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 .
High Collector-Emitter Breakdown Voltage VCEO= -160V(Min). Complement to Type 2SC4370. Full-mold package that does not require an insulat.

2SA1659 Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Coll

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POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1659-like datasheet