2SA1657 Datasheet - Inchange Semiconductor

2SA1657, Silicon PNP Power Transistor

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage VCEO= -150V(Min). Complement to Type 2SC4368. Full-mold package that does not require an insulating b.

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Datasheet Details

Part number:

2SA1657

Manufacturer:

Inchange Semiconductor

File Size:

210.19 KB

Description:

Silicon PNP Power Transistor

Applications

* Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A IB Base Curr

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2SA1657 Silicon PNP Power Transistor Inchange Semiconductor

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