* High fT : fT=500MHz.
* High breakdown voltage : VCEO=120V min.
* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.7pF/NPN, 4.0pF/PNP.
* Complementary PNP and NPN types.
* Adoption of FBET process.
* Micaless type. ( ) : 2SA1696 Specific
2SA1696
Sanyo Semicon Device
120.03 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3017
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1696/2SC4473
High-Definition CRT Display, Video Output Applications
Applicati.
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