2SA1696 Datasheet - Sanyo Semicon Device

2SA1696 PNP/NPN Epitaxial Planar Silicon Transistors

2SA1696 Features

* High fT : fT=500MHz.

* High breakdown voltage : VCEO=120V min.

* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.7pF/NPN, 4.0pF/PNP.

* Complementary PNP and NPN types.

* Adoption of FBET process.

* Micaless type. ( ) : 2SA1696 Specific

Datasheet Details

2SA1696

Sanyo Semicon Device

120.03 KB

Pnp/npn epitaxial planar silicon transistors.

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