2SA1697 Datasheet - Sanyo Semicon Device

2SA1697 PNP/NPN Epitaxial Planar Silicon Transistors

2SA1697 Features

* High fT : fT=300MHz.

* High breakdown voltage : VCEO=200V min.

* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.2pF/NPN, 2.7 pF/PNP

* Adoption of FBET process.

* Micaless type. Package Dimensions unit:mm 2041 [2SA1697/2SC4474] ( ) : 2SA

Datasheet Details

2SA1697

Sanyo Semicon Device

107.24 KB

Pnp/npn epitaxial planar silicon transistors.

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