* High fT : fT=300MHz.
* High breakdown voltage : VCEO=200V min.
* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.2pF/NPN, 2.7 pF/PNP
* Adoption of FBET process.
* Micaless type. Package Dimensions unit:mm 2041 [2SA1697/2SC4474] ( ) : 2SA
2SA1697
Sanyo Semicon Device
107.24 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3018 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1697/2SC4474 High-Definition CRT Display, Video Output Applications Applicati.
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