2SC3456 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3456
Manufacturer	Sanyo Semicon Device
File Size	107.59 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3456_SanyoSemiconDevice.pdf

High breakdown voltage and high reliability.
Fast switching speed (tf : 0.1µs typ).
Wide ASO.
Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC3456] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature.

📁 2SC3456 Similar Datasheet

2SC3400 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo)
2SC3401 - PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS (Sanyo)
2SC3403 - Silicon PNP Triple-Diffused Planar Type Transistor (ETC)
2SC3404 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3405 - Silicon NPN Triple Diffused Type TRANSISTOR (Toshiba Semiconductor)
2SC3409 - SILICON POWER TRANSISTOR (SavantIC)
2SC3412 - Power Transistor (Inchange Semiconductor)
2SC3413 - Silicon NPN Epitaxial Transistor (Hitachi Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |