2SC3790 Datasheet - Sanyo Semicon Device

2SC3790 PNP/NPN Epitaxial Planar Silicon Transistors

2SC3790 Features

* High breakdown voltage (VCEO≥300V).

* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP).

* Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0

Datasheet Details

2SC3790

Sanyo Semicon Device

41.38 KB

Pnp/npn epitaxial planar silicon transistors.

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