* Adoption of FBET process.
* High DC current gain.
* High VEBO (VEBO≥25V).
* High reverse hFE (150 typ).
* Small ON resistance [Ron=1Ω (IB=5mA)] Package Dimensions unit:mm 2003B [2SC3792] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratin
2SC3792
Sanyo Semicon Device
29.51 KB
Npn epitaxial planar silicon transistor.
Ordering number:ENN1858B NPN Epitaxial Planar Silicon Transistor 2SC3792 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications.
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