* 10.0±0.2 4.2±0.2
* High-speed switching 5.5±0.2 2.7±0.2
* High collector to base voltage VCBO
* Low collector to emitter saturation voltage VCE(sat)
* Full-pack package which can be installed to the heat sink with one screw I Absolute Maximum Ratings TC = 25°C
2SC3795A Datasheet (245.56 KB)
2SC3795A
Panasonic Semiconductor
245.56 KB
Silicon npn transistor.
Power Transistors
2SC3795, 2SC3795A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.2±0.2
16.
📁 Related Datasheet
2SC3795 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC3795, 2SC3795A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.2±0.2
16.
2SC3795 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed .
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2SC3795A - SILICON POWER TRANSISTOR
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Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package ·High breakdown vo.
2SC3795B - SILICON POWER TRANSISTOR
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Silicon NPN Power Transistors
2SC3795B
DESCRIPTION ·With TO-220F package ·High br.
2SC3795B - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
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2SC3790 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:ENN2254
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1480/2SC3790
High-Definiton CRT Display Video Output Applications
Features
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2SC3790 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3790
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Comple.
