Datasheet4U Logo Datasheet4U.com

2SC3798 Datasheet - Inchange Semiconductor

2SC3798 Power Transistor

*Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) *Low Collector Saturation Voltage *High Speed Switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high speed switching applications. ABSOLUTE MAXIMUM RA.

2SC3798 Datasheet (211.01 KB)

Preview of 2SC3798 PDF
2SC3798 Datasheet Preview Page 2

Datasheet Details

Part number:

2SC3798

Manufacturer:

Inchange Semiconductor

File Size:

211.01 KB

Description:

Power transistor.

📁 Related Datasheet

2SC3790 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

2SC3790 Silicon NPN Transistor (Inchange Semiconductor)

2SC3790 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

2SC3792 NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

2SC3793 Silicon NPN Transistor (Hitachi Semiconductor)

2SC3793 Silicon NPN Transistor (Inchange Semiconductor)

2SC3794 NPN Transistor (INCHANGE)

2SC3794 SILICON POWER TRANSISTOR (SavantIC)

TAGS

2SC3798 Power Transistor Inchange Semiconductor

2SC3798 Distributor