2SC3798

Power Transistor

Inchange Semiconductor

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2SC3798

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Inchange Semiconductor

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Description:

Power transistor.
isc Silicon NPN Power Transistor DESCRIPTION *Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Mi.
*Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) *Low Collector Saturation Voltage *High Sp.

✔ 2SC3798 Application

Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALU

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2SC3798 Power Transistor Inchange Semiconductor

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✔ 2SC3798 Application

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