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2SC3797 Power Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min. Low Collector Saturation Voltage. High Speed Switching. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number
2SC3797
Manufacturer
Inchange Semiconductor
File Size
212.86 KB
Datasheet
2SC3797_InchangeSemiconductor.pdf
Description
Power Transistor

Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Con

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