* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4770] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 0.6 3.5 20.4 Specifications 123
2SC4770
Sanyo Semicon Device
97.28 KB
Npn transistor.
Ordering number:EN3666A NPN Triple Diffused Planar Silicon Transistor 2SC4770 Ultrahigh-Definition Color Display Horizontal Deflection Output Applica.
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