* High speed (tf typ=100ns).
* High reliability (Adoption of HVP process).
* High breakdown voltage (VCBO=1500V).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4924] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specificatio
2SC4924
Sanyo Semicon Device
185.89 KB
Npn transistor.
Ordering number:EN4757
NPN Triple Diffused Planar Silicon Transistor
2SC4924
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
📁 Related Datasheet
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Ordering number:EN4766
NPN Epitaxial Planar Silicon Transistor
2SC4920
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· High DC current gain. · On-chi.
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· High DC current gain. · On-chi.
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2SC4922
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· High DC current gain. · On-chi.
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NPN Triple Diffused Planar Silicon Transistor
2SC4923
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
2SC4923 - SILICON POWER TRANSISTOR
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SavantIC Semiconductor
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Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PML package ·High speed ·High .
2SC4924 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
..
isc Product Specification
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2SC4924
DESCRIPTION ·High Breakdown Voltage:.
2SC4926 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC4926
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 11 GHz Typ • High gain, low nois.
2SC4927 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC4927
Silicon NPN Triple Diffused
Application
TV/character display horizontal deflection output
Features
• High breakdown voltage VCES = 1500 V • .
