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2SD1651C - NPN Triple Diffused Planar Silicon Transistor

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Sanyo Semicon Device

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2SD1651C NPN Triple Diffused Planar Silicon Transistor by Sanyo Semicon Device - Datasheet Preview — Datasheet preview – 2SD1651C

Datasheet Details

Part number	2SD1651C
Manufacturer	Sanyo Semicon Device
File Size	211.92 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SD1651C Datasheet
Additional preview pages of the 2SD1651C datasheet.

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Features

Package Dimensions unit : mm 2174A [2SD1651C] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pul.

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Published: Aug 2, 2009 |