Part number:
2SK3285
Manufacturer:
Sanyo Semicon Device
File Size:
48.57 KB
Description:
N-channel mosfet.
* Low ON resistance.
* 4V drive. Package Dimensions unit:mm 2093A [2SK3285] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2169 [2SK3285] 10.2 4.5 1.3 0.8 9.9 2.0 8.8 2.7 1.6 4.5 1 2 3 1.2 0.8
2SK3285
Sanyo Semicon Device
48.57 KB
N-channel mosfet.
📁 Related Datasheet
2SK3280 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6436
N-Channel Silicon MOSFET
2SK3280
DC/DC Converter Applications
Features
· Low ON-resistance. · 4V drive. · Ultrahigh-speed sw.
2SK3287 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3287
Silicon N Channel MOS FET High Speed Switching
ADE-208-742 C (Z) 4th.Edition. June 1999 Features
• Low on-resistance R DS = 1.26 Ω typ. (VGS .
2SK3288 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3288
Silicon N Channel MOS FET High Speed Switching
ADE-208-803 (Z) 1st.Edition. June 1999 Features
• Low on-resistance R DS = 2.7 Ω typ. (VGS = 1.
2SK3289 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3289
Silicon N Channel MOS FET High Speed Switching
ADE-208-743C (Z) 4th.Edition. June 1999 Features
• Low on-resistance R DS =1.26 Ω typ. (V GS =.
2SK320 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK320
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Volt.
2SK320 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
(Hitachi Semiconductor)
..
.
2SK320 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
(Hitachi Semiconductor)
..
.
2SK3204 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effe.
