Part number:
2SK3856
Manufacturer:
Sanyo Semicon Device
File Size:
63.06 KB
Description:
N-channel silicon mosfet.
* FM Tuner, VHF-Band Amplifier Applications Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Allowable Power Dissipation Channel Tem
2SK3856
Sanyo Semicon Device
63.06 KB
N-channel silicon mosfet.
📁 Related Datasheet
2SK385 - N-Channel Transistor
(Toshiba)
:
SILICON N CHANNEL MOS TYPE (tf-MOS)
2SK385
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE A.
2SK385 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK385
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed ·Mi.
2SK3850 - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number : ENN8193
2SK3850
2SK3850
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Best suited for motor .
2SK3851 - MOSFET
(Sanken)
MOS FET 2SK3851
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
60
V
VGSS
±20
V
ID
±85
A
ID (pulse)*1
±280
A
PD
150
W
.
2SK3857TK - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
..
2SK3857TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3857TK
For ECM
• Application for Ultra-pact ECM
.
2SK3800 - MOSFET
(Sanken)
MOS FET 2SK3800
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±70
A
ID (pulse)*1
±140
A
PD EAS*2
80.
2SK3800 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK3800
FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage-
: VDSS=40V(Min) ·Static Drain-Source On-Resis.
2SK3801 - MOSFET
(Sanken)
MOS FET 2SK3801
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±70
A
ID (pulse)*1
±140
A
PD EAS*1
10.
