2SK385 - N-Channel Transistor
2SK385 Features
* . High Breakdown Voltage : V(br)dss = 400V . High Forward Transfer Admittance : ] Yf s ) =5S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max.) @ VD s=400V : V tn=1.5~3.5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm ^,.20.5 MAX. _", 03J3±Q2 yi
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