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2SK385 - N-Channel MOSFET Transistor

Description

Drain Current ID=10A@ TC=25℃ Drain Source Voltage- : VDSS= 400V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage,high speed power Switching.

Low leakage Current.

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Datasheet Details

Part number 2SK385
Manufacturer Inchange Semiconductor
File Size 233.23 KB
Description N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor 2SK385 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage,high speed power Switching. •Low leakage Current. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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