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2SK3857TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3857TK
For ECM
• Application for Ultra-compact ECM
0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05
Unit: mm
0.45 0.45
1.4±0.05
0.9±0.1
Absolute Maximum Ratings (Ta=25°C)
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C °C
1
0.395±0.03
TESM3
IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA
1.Drain 2.Source 3.Gate
JEDEC JEITA TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
Marking
Equivalent Circuit
D
Type Name
9
IDSS Classification Symbol A :A -Rank B :B-Rank
G
S
1
2007-01-08
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2SK3857TK Datasheet
