2SK385 - N-Channel Transistor

Toshiba

Key Features

. High Breakdown Voltage : V(br)dss = 400V . High Forward Transfer Admittance : ] Yf s ) =5S (Typ. ) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max. ) @ VD s=400V : V tn=1.5~3.5V @ lD=lmA.

2SK385 n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK385
Manufacturer	Toshiba
File Size	41.14 KB
Description	N-Channel Transistor
Datasheet	2SK385 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON N CHANNEL MOS TYPE (tf-MOS) 2SK385 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . High Breakdown Voltage : V(br)dss = 400V . High Forward Transfer Admittance : ] Yf s ) =5S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max.) @ VD s=400V : V tn=1.5~3.5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm ^,.20.5 MAX. _", 03J3±Q2 yi* . MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature SYMBOL VDSX VGSS ID idp Pd Teh RATING 400 ±20 10 15 120 150 UNIT 545±0.15 545±ai5 mmo dd + 1 00 to d T= = ^2 =E 37 f 1. GATE 2. DRAIN (HEAT SINK) 3.