2SK385
2SK385 is N-Channel Transistor manufactured by Toshiba.
FEATURES
. High Breakdown Voltage : V(br)dss = 400V
. High Forward Transfer Admittance : ] Yf s ) =5S (Typ.)
. Low Leakage Current : l GSS=±100n A(Max. ) @ Vgs=±20V
. Enhancement-Mode l DSS=lm A(Max.) @ VD s=400V
: V tn=1.5~3.5V @ l D=lm A
INDUSTRIAL APPLICATIONS Unit in mm
^,.20.5 MAX. _", 03J3±Q2 yi- .
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC Pulse
Drain Power Dissipation (Tc=25°C)
Channel Temperature
SYMBOL VDSX VGSS ID idp
Pd Teh
RATING 400 ±20 10 15
UNIT
545±0.15
545±ai5 mmo dd
+ 1 00 to d
T=
= ^2
=E 37 f
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
Storage Temperature Range
- stg
ELECTRICAL CHARACTERISTICS Ta=25°C)
-55-150
TOSHIBA Weight : 9.7g
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Gate...
