2SK387 - N-Channel Transistor

Toshiba

Key Features

. Low Drain-Source ON Resistance : RdS(ON) = 0- 12 ^ ( tYP.
. High Forward Transfer Admittance : 1 Yf s | =6S (Typ. ) . Low Leakage Current : lGsS =±100nA (Max « ) @ VgS=±20V lDSS=lmA(Max. ) @ VD s=150V . Enhancement-Mode : Vth=1.5~3.5V @ lD=lmA.

2SK387 n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK387
Manufacturer	Toshiba
File Size	40.77 KB
Description	N-Channel Transistor
Datasheet	2SK387 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON N CHANNEL MOS TYPE for-MOS) ) 2SK387 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . Low Drain-Source ON Resistance : RdS(ON) = 0- 12 ^ ( tYP • . High Forward Transfer Admittance : 1 Yf s | =6S (Typ.) . Low Leakage Current : lGsS =±100nA (Max « ) @ VgS=±20V lDSS=lmA(Max.) @ VD s=150V . Enhancement-Mode : Vth=1.5~3.5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm 2Q5MAX. 0'3.3±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) SYMBOL VDSX VGSS ID idp RATING 150 ±20 12 40 150 UNIT 5.45±ai5 545±Q15 mo dd < 5 m+ 1 to d 00 OS V_ f 1. QATE 2. DRAIN (HEAT SINK) 3.