| Part Number | 2SK387 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. SS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=10A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=150V; VGS= 0 2SK387 MIN TYP. MAX UNIT 15. |
2SK387 Datasheet
The 2SK387 is a N-Channel MOSFET Transistor.
| Part Number | 2SK387 |
|---|---|
| Description | N-Channel Transistor |
| Manufacturer | Toshiba |
| Overview |
:
SILICON N CHANNEL MOS TYPE for-MOS)
)
2SK387
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
FEATURES
. Low Drain-Source ON Re.
. Low Drain-Source ON Resistance : RdS(ON) = 0- 12 ^ ( tYP * . High Forward Transfer Admittance : 1 Yf s | =6S (Typ.) . Low Leakage Current : lGsS =±100nA (Max « ) @ VgS=±20V lDSS=lmA(Max.) @ VD s=150V . Enhancement-Mode : Vth=1.5~3.5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm 2Q5MAX. 0'3.3±. |