C5310 - 2SC5310

Sanyo Semicon Device

Datasheet Details

Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products. Package Dimensions unit:mm 2018B [2SA1973/2SC5310] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications ( ) : 2SA1973 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Colle.

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Published: Sep 25, 2011 |