* Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Co
C5707
Sanyo Semicon Device
63.97 KB
2sc5707.
www.DataSheet4U.com Ordering number : ENN6913
2SA2040/2SC5707
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2040 / 2SC5707
High Current Switchin.
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