* Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2
C5709
Sanyo Semicon Device
73.89 KB
2sc5709.
www.DataSheet4U.com
Ordering number : ENN6914
2SA2043 / 2SC5709
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2043 / 2SC5709
DC / DC Converter A.
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