Datasheet4U Logo Datasheet4U.com

C5703 Datasheet - Toshiba Semiconductor

C5703 2SC5703

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage.

C5703 Datasheet (159.09 KB)

Preview of C5703 PDF
C5703 Datasheet Preview Page 2 C5703 Datasheet Preview Page 3

Datasheet Details

Part number:

C5703

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

159.09 KB

Description:

2sc5703.

📁 Related Datasheet

C5702 2SC5702 (Renesas)

C5706 PNP / NPN Epitaxial Planar Silicon Transistor (Sanyo Semiconductor)

C5706 Bipolar Transistor (ON Semiconductor)

C5707 2SC5707 (Sanyo Semicon Device)

C5709 2SC5709 (Sanyo Semicon Device)

C572 2SC572 (Toshiba Semiconductor)

C5720 2SC5720 (Toshiba Semiconductor)

C5723 NPN Triple Diffused Planar Silicon Transistor (Sanyo)

TAGS

C5703 2SC5703 Toshiba Semiconductor

C5703 Distributor