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C5703 Datasheet - Toshiba Semiconductor

C5703 2SC5703

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage.

C5703-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

C5703

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

159.09 KB

Description:

2sc5703.

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C5703 C5703 2SC5703 Toshiba Semiconductor

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