FTD2012 - N-Channel MOSFET
FTD2012 Features
* Low ON-state resistance.
* 4V drive.
* Mount height of 1.1mm.
* Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissip
