FTD2012 - N-Channel MOSFET

Datasheet Summary

Low ON-state resistance.
4V drive.
Mount height of 1.1mm.
Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forwa.

Sanyo Semicon Device

Part number	FTD2012
Manufacturer	Sanyo Semicon Device
File Size	10.53 KB
Description	N-Channel MOSFET
Datasheet	FTD2012 Datasheet
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FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm.

Published: Mar 23, 2005 |