FTD2012 N-Channel MOSFET

Sanyo Semicon Device

Description

FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE .

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Datasheet Specifications

Part number: FTD2012
Manufacturer: Sanyo Semicon Device
File Size: 10.53 KB
Datasheet: FTD2012_SanyoSemiconDevice.pdf
Description: N-Channel MOSFET

Features

* Low ON-state resistance.
* 4V drive.
* Mount height of 1.1mm.
* Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissip

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FTD2012 N-Channel MOSFET Sanyo Semicon Device

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